Samsung begins high-performance 96-layer 3D V-NAND production
High speed NAND that uses the Toggle DDR 4.0 interface
Published: 10th July 2018 | Source: Samsung |
Samsung begins high-performance 96-layer 3D V-NAND mass production
While Samsung officially says that this NAND has "more than 90 layers" the company's previous statements have indicated that their latest NAND has 96 layers of 3D charge trap flash cells. Thanks to this boost over their last-generation 64-layer NAND, Samsung has been able to reduce the height of each sell layer by 20%, lower cell-cell crosstalk and increase their manufacturing productivity by more than 30%.
Firth generation V-NAND chips from |Samsung will also feature the industry's first use of the "Toggle DDR 4.0" interface, which can increase the speed of data transmission between storage and memory. Samsung's latest 256Gb V-NAND can reach 1.4 Gbps speeds, which is a 40% performance boost when compared to its 4th generation, 64-layer predecessor.
Offsetting the additional power cost of Samsung's faster interface, Samsung's latest V-NAND now has a lower operating voltage of 1.2V, which is a huge reduction over the 1.8V requirements of last-generation NAND.
Fifth generation NAND is also able to offer faster data write speeds of 500 microseconds, which is a 30% improvement over last-generation NAND while read signals have been further reduced to 50 microseconds. This will significantly decrease read/write latency, which is quickly becoming a larger performance bottleneck than raw read/write output in some professional applications.
Samsung plans to continue to ramp up their 5th Generation NAND production, starting with 256 Gb TLC memory dies. This memory will be useful for both consumer and enterprise-grade SSDs, though larger die sizes will be created in time to deliver customers options with lower costs per bit.
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