Samsung Plans to Mass Produce 3nm GAAFET Chips in 2021

Samsung has confirmed that they plan to start mass producing 3nm GAAFET (Gate-All-Around Field-Effect Transistors) in 2021, utilising a transistor type that is designed to succeed the FinFET transistors that we know today. 

The name GAAFET describes everything that you need to know about the technology. It overcomes the scaling and performance limitations of FinFET by featuring four gates around all sides of a channel to offer full coverage. By comparison, FinFET effectively covers three sides of a fan-shaped channel. In effect, GAAFET takes the idea of a three-dimensional transistor to the next level. 

Wrapping the gate around the channel reduced potential voltage losses, increasing transistor efficiency in the process. This allows lower supply voltages to be used, allowing for improved power efficiency. 

Samsung has been developing their GAAFET technology for a number of years, with the company’s previous estimates placing the launch of 4nm GAAFET technology as early as 2020. Samsung is also expected to be the first company to launch a 7nm EUV process node, with plans to start production later this year. Their competitor, TSMC plans to implement EUV technology into their 7nm + node, a successor to their current-generation 7nm process.