Samsung Starts Mass Production of 3-bit 3D V-NAND
Published: 9th October 2014 | Source: Samsung |
Samsung Starts Mass Production of 3-bit 3D V-NAND Memory
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).
"With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business."
The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 128 gigabits (Gb) of memory storage.
In Samsung's V-NAND chip structure, each cell is electrically connected to a non-conductive layer using charge trap flash (CTF) technology. Each cell array is vertically stacked on top of one another to form multibillion-cell chips.
The use of 3 bit-per-cell, 32-layer vertically stacked cell arrays sharply raises the efficiency of memory production. Compared to Samsung's 10 nanometer-class* 3-bit planar NAND flash, the new 3-bit V-NAND has more than doubled wafer productivity.
Samsung introduced its first generation V-NAND (24 layer cells) in August 2013, and introduced its second generation V-NAND (32-layer) cell array structure in May 2014. With the launch of the 32-layer, 3-bit V-NAND, Samsung is leading the 3D memory era by speeding up the evolution of V-NAND production technology.
After having first produced SSDs based on 3-bit planar NAND flash in 2012, Samsung has proven that there is indeed a mass market for high-density 3-bit NAND SSDs.
The industry's first 3-bit 3D V-NAND will considerably expand market adoption of V-NAND memory, to SSDs suitable for general PC users, in addition to efficiently addressing the high-endurance storage needs of most servers today.
What is v-NAND?
The traditional way to increase memory density has been to shrink the production process, similar to CPUs and GPUs, but in the case of memory performance and durability start to drop off when you get smaller and smaller. Reducing the process nodes used in SSDs further may even lower the expected performance of SSDs.
Samsung’s solution is to stack higher, rather than wider and have created 3D NAND chips, called V-NAND by Samsung, which add transistors vertically as well as horizontally. Because they can increase density by going vertically as well as horizontally, the new 850 Pro SSDs don’t even need to run the same 19nm memory as the 840 EVO drives, but rather use the older 30nm process. despite the larger process node the memory density and power requirements remain lower than their 19nm NAND, while still offering higher performance.
V-NAND is going to hit out PCs by storm in the next few years, not just by way of new SSDs but in GPU and even System memory, let’s hope that as adoption of this new tech spreads we will even see a price reduction. Come on guys we all want 25p/GB SSDs don’t we? (perhaps a bit over ambitious).
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