Hitachi Going For Quad
"Hitachi has announced the technology that will allow 4TB desktop and 1TB notebook drives by 2011."
Published: 16th October 2007 | Source: Hitachi |
The continued advancements of hard disk drives requires the ability to squeeze more and more, and thus, smaller and smaller data bits onto the recording the media, necessitating the continued miniaturization of the recording heads to read those bits. However, as the head becomes smaller, electrical resistance increases, which in turn also increases the noise output and compromises the head's ability to correctly read the data signal.
Cutting Through the Noise - The Strongest Signal-to-Noise Ratio
High signal output and low noise is what is desired in hard drive read operations, thus, researchers try to achieve a high signal-to-noise (S/N) ratio in developing effective read-head technology. Using TMR head technology, researchers predict that accurate read operations would not be conducted with confidence as recording densities begin to surpass 500 Gb/in2.The CPP-GMR device, compared to the TMR device, exhibits less of an electrical resistance, resulting in lower electrical noise but also a smaller output signal. Therefore, issues such as producing a high output signal while maintaining a reduced noise to increase the S/N ratio needed to be resolved before the CPP-GMR technology became practical In response to this challenge, Hitachi, Ltd. and Hitachi GST have co-developed high-output technology and noise-reduction technology for the CPP-GMR head. A high electron-spin-scattering magnetic film material was used in the CPP-GMR layer to increase the signal output from the head, and new technology for damage-free fine patterning and noise suppression were developed. As a result, the signal-to-noise ratio, an important factor in determining the performance of a head, was drastically improved. For heads with track widths of 30nm to 50nm, optimal and industry-leading S/N ratios of 30 decibel (dB) and 40 dB, respectively, were recently achieved with the heads co-developed at Hitachi GST's San Jose Research Center and Hitachi, Ltd.'s Central Research Laboratory in Japan.Recording heads with 50 nm track-widths are expected to debut in commercial products in 2009, while those with 30 nm track-widths will be implemented in products in 2011. Current TMR heads, shipping in products today, have track-widths of 70 nm.
The discovery of the GMR effect occurred in 1988, and that body of work was recognized just last week with a Nobel Prize for physics. Nearly two decades after its discovery, the effects of GMR technology are felt more strongly than ever with Hitachi's demonstration of the CPP-GMR head today. In 1997, nine years after the initial discovery of GMR technology, IBM implemented the industry's first GMR heads in the Deskstar 16GXP. GMR heads allowed the HDD industry to continue its capacity growth and enabled the fastest growth period in history, when capacity doubled every year in the early 2000s. Today, although areal density growth has slowed, advancements to recording head technology, along with other HDD innovations, are enabling HDD capacity to double every two years.In the past 51 years of the HDD industry, recording head technology has seen monumental decreases in size as areal density and storage capacity achieved dizzying heights. The first HDD recording head, called the inductive head, debuted in 1956 in the RAMAC - the very first hard drive - with a track width of 1/20th of an inch or 1.2 million nm. Today, the CPP-GMR head, with a track-width of about one-millionth of an inch or 30 nm, represents a size reduction by a factor of 40,000 over the inductive head used in the RAMAC in 1956.
The Incredible Shrinking Head
- CPP-GMR: As an alternative to existing TMR heads, CPP-GMR head technology has a lower electrical resistance level, due to its reliance on metallic rather than tunneling conductance, and is thus suited to high-speed operation and scaling to small dimensions.
- TMR head: Tunnel Magneto-Resistance head
A tunnel magneto-resistance device is composed of a three layer structure of an insulating film sandwiched between ferromagnetic films. The change in current resistance which occurs when the magnetization direction of the upper and lower ferromagnetic layers change (parallel or anti parallel) is known as the TMR effect, and ratio of electrical resistance between the two states is known as the magneto-resistance ratio.
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